Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 9, Pages 966-968Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2052091
Keywords
Gibbs free energy; RRAM; TaOx; unipolar
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Funding
- National Natural Science Foundation of China [60625403, 90207004]
- 973 Projects [2006CB302701]
- National Science and Major Project [2009ZX02035-001]
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In this letter, a reproducible unipolar resistive change memory (RRAM) based on TaOx was successfully fabricated through electrode design. The fabricated unipolar RRAM exhibits lower switching voltages, fast switching speed of less than 80 ns, excellent retention capabilities, and stable cycling behaviors. Moreover, the role of top-electrode material on the resistive switching mode polarity of TaOx-based RRAM was verified by comparative experiments. Analysis about the electrode effect on the resistive switching mode polarity of TaOx-based RRAM with the theory of Gibbs free energy may provide some guidelines for the design of unipolar metal-oxide-based RRAM.
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