Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 6, Pages 615-617Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2047000
Keywords
Etching; low-frequency noise (LFN); MOSFET; nanowire (NW)
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Funding
- National Institutes of Health [R01EB008260]
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The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are shown to have significantly lower noise and subthreshold swing, and the average extracted Hooge parameter for ODE wet-etched devices (alpha(H) = 2.1 x 10(-3)) is comparable to the values reported for submicrometer MOSFETs with a metal/HfO2 gate stack.
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