Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 7, Pages 671-673Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2048996
Keywords
HFET; high electron mobility transistor (HEMT); InAlGaN; lattice-matched; molecular beam epitaxy (MBE); quaternary; transistor
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Funding
- German Federal Ministry of Defence (BMVg)
- Federal Office of Defense Technology and Procurement (BWB)
- Bundeswehr Technical Center for Information Technology and Electronics [WTD 81]
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GaN-based high electron mobility transistors (HEMTs) with a nearly strain-free high-Al-content quaternary barrier and electron mobilities up to 1590 cm(2)/V . s have been grown on 4H-SiC using molecular beam epitaxy (MBE). The processed devices with 150-nm gate length exhibit a high dc performance with a maximum current density of 2.3 A/mm and an extrinsic transconductance up to 675 mS/mm that is among the highest values reported until now for any III-N transistor. We further present, to our knowledge, the first power measurements at 10 GHz of MBE-grown GaN HEMTs with nearly lattice-matched InAlGaN barrier achieving 47% power-added efficiency at 10 V and an output power density of 5.6 W/mm at 30-V bias.
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