Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 9, Pages 1020-1022Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2055828
Keywords
GeO2; resistive random access memory (RRAM); SrTiO3 (STO)
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Funding
- National Science Council of Taiwan
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Using novel stacked covalent-bond-dielectric GeOx (GeO) on metal-oxide SrTiO3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 mu W (3.5 mu A at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 10(6) memory window for 10(5)-s retention at 85 degrees C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.
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