Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 10, Pages 1140-1142Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2058087
Keywords
Efficiency; Indium Gallium Nitride (InGaN) solar cell; spreading layer
Categories
Funding
- Ministry of Education, Science and Technology [2009-0065432]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20102010100020] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0065432] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
InGaN/GaN p-i-n solar cells were fabricated either without a current spreading layer or with ITO or Ni/Au spreading layers. A 10.8% indium composition was confirmed within an i-InGaN layer using X-ray diffraction. I-V characteristics were measured at AM1.5 conditions, with solar cell parameters being obtained based on I-V curves in all cases. Current spreading layers produced strong effects on efficiency. The solar cell with the ITO current spreading layer showed the best results, i.e., a short circuit current density of 0.644 mA/cm(2), an open circuit voltage of 2.0 V, a fill factor of 79.5%, a peak external quantum efficiency of 74.1%, and a conversion efficiency of 1.0%.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
