Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 4, Pages 368-370Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2041182
Keywords
Switches; Indium tin oxide; Electrodes; Nonvolatile memory; Polymers; Gold; various electrode materials; Compliance current (CC); nonvolatile memory devices; poly(3; 4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film
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Funding
- Samsung Electronics Company
- Korean Ministry of Education
- POSTECH Core Research Program
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The effect of various electrode materials has been studied for organic nonvolatile memory devices using a poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) thin film. The bottom electrodes (BEs) were indium tin oxide (ITO) and Al, while the top electrodes (TEs) were Al, Ti, Cr, ITO, Au, Ni, Pd, and Pt. The ITO/PEDOT:PSS/TE devices only had a bipolar switching behavior, while the Al/PEDOT:PSS/TE devices did not have any switching behavior unless a compliance current (CC) was used in the write-operation method. Then, they had a unipolar switching behavior irregardless of the TE material. Therefore, the BE material and the CC have crucial roles in the switching behavior and characteristics.
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