Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 10, Pages 1015-1017Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2027914
Keywords
GaN; heterogeneous integration; high electron mobility transistor (HEMT); metal-oxide-semiconductor field-effect transistor (MOSFET); Si(100); virtual substrate
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Funding
- DARPA Young Faculty Award
- Interconnect Focus Center
- Korea Foundation for Advanced Studies
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The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate through a wafer bonding and etch-back technique. The high thermal stability of nitride semiconductors allowed the fabrication of Si MOSFETs on this substrate without degrading the performance of the GaN epilayers. After the Si devices were fabricated, the nitride epilayer is exposed, and the nitride transistors are processed. By using this technology, GaN and Si devices separated by less than 5 mu m from each other have been fabricated, which is suitable for building future heterogeneous integrated circuits.
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