Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 6, Pages 611-613Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2020182
Keywords
Graphene; nanoribbon; resistivity
Categories
Funding
- Interconnect Focus Center (IFC), DARPA/SRC Focus Center
- e Nanoelectronics Research Initiative (NRI) through the INDEX Center
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Graphene nanoribbon (GNR) interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given linewidth (18 nm < W < 52 nm) is about three times that of a Cu wire, whereas the best GNR has a resistivity that is comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as line-edge roughness scattering; as a result, the best reported GNR resistivity is three times the limit imposed by substrate phonon scattering. This letter reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.
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