Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 9, Pages 919-921Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2025896
Keywords
Al/Pr0.7Ca0.3MnO3 (PCMO); interface switching; resistance random-access memory (ReRAM); uniformity
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Funding
- Korea Ministry of Knowledge Economy
- Korea Science and Engineering Foundation
- Ministry of Education, Science and Technology of Korea [R31-2008-000-10026-0]
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A systematic study on the switching mechanism of an Al/Pr0.7Ca0.3MnO3 (PCMO) device was performed. A polycrystalline PCMO film was deposited using a conventional sputtering method. A thin Al layer was introduced to induce a reaction with the PCMO, forming aluminum oxide (AlOx). Transmission electron microscopy analysis of the interface between Al and PCMO showed that resistive switching was governed by the formation and dissolution of AIO(x). Some basic memory characteristics, such as good cycle endurance and data retention of up to 10(4) s at 125 degrees C, were also obtained. It also showed excellent switching uniformity and high device yield.
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