Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 12, Pages 1317-1319Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2033392
Keywords
Amorphous indium-gallium-zinc oxide (a-IGZO); equivalent oxide thickness; HfLaO; high-k; thin-film transistors
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Funding
- National Science Council of Taiwan
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In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low V-T of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm(2)/V . s, and large I-on/I-off ratio of 5 x 10(7). These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.
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