Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 4, Pages 334-336Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2014256
Keywords
CeOx; conducting filament; oxygen vacancy; resistive switching (RS)
Categories
Funding
- NSFC
Ask authors/readers for more resources
Al/CeOx/Pt devices with nonstoichiometric CeOx (1.5 < x < 2) films were fabricated. The unique resistive switching (RS) behaviors for resistive random access memory applications, including stable and sharp bipolar RS processes and a multilevel and self-stop set process without current compliance and without excessive requirement on a high-voltage electro-forming process, were demonstrated. A multifilament switching model based on the distribution characteristics of oxygen vacancies in CeOx films is proposed to explain the observed RS behaviors.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
