High-Performance In0.7Ga0.3As-Channel MOSFETs With High-kappa Gate Dielectrics and alpha-Si Passivation

Long and short buried-channel In0.7Ga0.3As MOSFETs with and without alpha-Si passivation are demonstrated. Devices with of-Si passivation show much higher transconductance and an effective peak mobility of 3810 cm(2)/V . s. Short-channel MOSFETs with a gate length of 160 nm display a current of 825 mu A/mu m at V-g - V-t = 1.6 V and peak transconductance of 715 mu S/mu m. In addition, the virtual source velocity extracted from the short-channel devices is 1.4-1.7 times higher than that of Si MOSFETs. These results indicate that the high-performance In0.7Ga0.3As-channel MOSFETs passivated by an a-Si layer are promising candidates for advanced post-Si CMOS applications.