Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 6, Pages 593-595Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2019769
Keywords
Charge carrier mobility; field-effect transistors (FETs); nanotechnology; semiconductor materials
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Funding
- National Science Foundation [ECCS 07-47178]
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We demonstrate the first metal-semiconductor field-effect transistor with a self-assembled planar < 110 > GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of similar to 150 mV/dec, maximum g(m) of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of similar to 4100 cm(2)/V . s with corresponding electron concentration of 2.3 . 10(17) cm(-3) is derived by fitting the experimental data using a self-consistent long channel field effect device model.
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