Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 10, Pages 1039-1041Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2029876
Keywords
Hafnium oxide; high permittivity; organic thin-film transistor (OTFT); solution process; surface energy
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Funding
- National Science Council of Taiwan [NSC 95-2221-E-006-428-MY3]
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Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (kappa = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (gamma(s)) on the surface of the HfOx layer were 1.304 nm and 34.24 mJ/cm(2), respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8 cm(2)/(V . s).
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