Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 10, Pages 1078-1080Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2027615
Keywords
Carbon nanotube (CNT); mean free path (MFP); mobility; modeling; transistor; transport
Categories
Funding
- NSF [CCF-0829907]
- Nanoelectronics Research Initiative MIND Center
- Direct For Computer & Info Scie & Enginr
- Division of Computing and Communication Foundations [0829907] Funding Source: National Science Foundation
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We present new data and a compact mobility model for semiconducting single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest that the room temperature mobility does not exceed 10 000 cm(2)/V . s at high carrier density (n > 0.5 nm(-1)) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.
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