Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 7, Pages 733-735Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2021001
Keywords
Bipolar switching; reset; resistance-change memory; titanium oxide (TiOx); unipolar switching
Categories
Funding
- Defense Advanced Research Projects Agency
- Space and Naval Warfare Systems Center [N66001-04-1-8916]
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In this letter, the physical mechanisms of resetting a TiOx resistance-change memory device are explored for both unipolar and bipolar switching modes. It is observed that the statistical distributions of switching parameters are very different for the two types of switching modes. The data support previous evidence that thermal dissolution of the conductive filament (CF) is the mechanism for unipolar reset, while local redox reaction is responsible for bipolar reset. It is found that the CF is destroyed during unipolar switching but can be reused during bipolar switching.
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