Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 12, Pages 1269-1271Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2032937
Keywords
Hafnium oxide; thermal conductivity; thermal interface resistance; picosecond pump-probe thermometry
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Funding
- Semiconductor Research Corporation
- MARCO Interconnect Focus Center
- Defense University
- Stanford Graduate Fellowship
- Stanford Initiative in Nanoscale Materials and Processes
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Thin-film HfO2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-angstrom-thick HfO2 films. A picosecond pump-probe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/( m . K). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.
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