Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 6, Pages 623-625Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2020613
Keywords
Crystallization; cubic structure; hafnium oxide; high-kappa; dielectric; lanthanum oxide
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It is demonstrated that HfO2 films can have much higher dielectric-constant values than the usual reported value of 20-24 by optimized incorporation of lanthanurn element and crystallization to cubic structure. When HfO2 with 8% La is crystallized into cubic structure, the film exhibits the kappa value of similar to 38 which is the highest among ever reported HfO2-based high-kappa dielectrics. The increased kappa value of HfO2 with 8% La enables the leakage current to be reduced more than one order of magnitude lower, compared to amorphous-phase HfO2 under the same electric field. The dependence of film thickness and annealing temperature on the cubic crystallization is also reported.
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