Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 12, Pages 1362-1364Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2033618
Keywords
Nanoparticle (NP); nonvolatile memory (NVM); size-tunable platinum
Categories
Funding
- National Science Foundation [GOALI-0523656]
- Techguard Security
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The charge-storage characteristics of a metal-oxide-semiconductor (MOS) structure containing size-tunable sub-2 nm Pt nanoparticles (NPs) between Al2O3 tunneling and capping oxide layers were studied. Significantly different amounts of memory window were obtained with the different sizes of Pt NP embedded MOS structures and reached a maximum of 4.3 V using a 1.14 nm Pt NP, which has the strongest charging capability caused by optimum size and the largest particle density obtained in our deposition method. Satisfactory long-term nonvolatility was attained in a low electric field due to the Coulomb blockade and quantum confinement effects in similar to 1 nm Pt NP. These properties are very promising in view of device application.
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