4.6 Article

External Compensation of Nonuniform Electrical Characteristics of Thin-Film Transistors and Degradation of OLED Devices in AMOLED Displays

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 4, Pages 377-379

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2014885

Keywords

Degradation; external compensation; organic light-emitting diode (OLED); polycrystalline-silicon thin-film transistor (TFT)

Funding

  1. National Research Foundation of Korea [과C6A1612] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

Ask authors/readers for more resources

The variation of electrical characteristics of polycrystalline-silicon thin-film transistor (TFT) and degradation of organic light-emitting-diode (OLED) device cause nonuniform intensity of luminance and image sticking in active-matrix OLED (AMOLED) displays. An external compensation method that senses and compensates variations of threshold voltage and mobility of TFTs and degradation of OLED device is proposed. The effect of the external compensation method on AMOLED pixel is experimentally verified by measuring the luminance of OLEDs and the electrical characteristics of TFTs in AMOLED pixels.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available