Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 2, Pages 126-129Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2010004
Keywords
Chalcogenide; electrothermal simulations; nonvolatile memory; phase-change memory (PCM)
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The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, R-d) is found to be inversely proportional to the amplitude of the programming current, as R-d = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.
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