Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 12, Pages 1309-1311Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2006637
Keywords
Active-matrix organic light-emitting diode (AMOLED); Ga2O3-In2O3-ZnO (GIZO); oxygen supply; thin-film transistor (TFT); threshold voltage
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The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm(2)/V center dot s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.
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