High density and low leakage current in TiO2 MIM capacitors processed at 300 °C

We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300 degrees C, which show a capacitance density of 28 fF/mu m(2) and a leakage current of 3 x 10(-8) (25 degrees C) or 6 x 10(-7) (125 degrees C) A/cm(2) at -1 V. This performance is due to the combined effects of 300 degrees C nanocrystallized high-kappa, TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.