High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts

Rapid melt growth was used to fabricate gate-all-around germanium-on-insulator (GeOI) p-MOSFETs with plasma-nitrided Ge surface, Al2O3 high-k gate dielectric, and self-aligned NiGe contacts. The subthreshold swing is 71 mV/dec, which is better than those of the bulk and nanowire Ge p-MOSFETs reported to date. Planar GeOI p-MOSFET arrays show 40% hole mobility enhancement at a high effective field, which is as good as bulk Ge devices.