Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 8, Pages 879-881Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2000815
Keywords
amorphous gallium-indium zinc-oxide thin film transistor (a-GIZO TFT); analog circuits; a-Si : H TFT; intersection point; MOSFET circuits; overlap distance; series resistance
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Funding
- National Research Foundation of Korea [과C6A1605] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit of a plot of the reciprocal of channel resistance versus gate voltage yields a threshold voltage of 3.5 V and a field-effect mobility of about 13.5 cm(2)/V . s. Furthermore, in a-GIZO TFTs, most of the current flows in the distance range of 0-0.5 mu m from the channel edge and shorter than that in a-Si:H TFTs. Moreover, unlike a-Si:H TFTs, a-GIZO TFTs did not show an intersection point, because they did not contain a highly doped ohmic (n+) layer below the source/drain electrodes.
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