Inversion-mode self-aligned In0.53Ga0.47AsN-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate

A high-performance In0.53Ga0.47As n-channel MOSFET integrated with a HfAlO gate dielectric and a TaN gate electrode was fabricated using a self-aligned process. After HCl cleaning and (NH4)(2)S treatment, the chemical vapor deposition HfAl0 growth on Ino.53Gao.47As. exhibits a high-quality interface. The fabricated nMOSFET with a HfAlO gate oxide thickness of 11.7 mn shows a gate leakage current density as low as 2.5 x 10(-7) A/cm(2) at V, of I V. Excellent inversion capacitance was illustrated. Silicon implantation was self-aligned to the gate, and low-temperature activation for source and drain was achieved by rapid thermal annealing at 600 degrees C for 1 min. The source and drain junction exhibited an excellent rectifying characteristic and high forward current. The result of an Ino.53Gao.47As nMOSFET shows well-performed I-d-V-d and I-d-V-g characteristics. The record high peak electron mobility, of 1560 cm(2)/Vs has been achieved without any correction methods considering interface charge and parasitic resistance.