Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 5, Pages 500-502Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.920279
Keywords
carbon nanotube (CNT); field-effect transistor; random network of CNTs; rectifier; single-walled CNT (SWCNT)
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This letter presents rectifiers based on the diode connection of carbon nanotube network (CNN) transistors. Despite a low density of carbon nanotubes in the CNNs, the devices can achieve excellent performance with a forward/reverse current ratio reaching 10(5). By casting nanotube suspension on oxidized Si substrates with predefined electrodes, CNN-based field-effect transistors are readily prepared. By short-circuiting the source and gate terminals, CNN-based rectifiers are realized with the rectification characteristics independent of whether Pd or Al is employed as the contact electrodes. This independence is especially attractive for applications of CNN-based transistors/rectifiers in flexible electronics with various printing techniques.
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