Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 8, Pages 941-943Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2000964
Keywords
failure analysis; flash memories; random telegraph noise (RTN); statistical analysis
Categories
Ask authors/readers for more resources
The impact of program/erase (P/E) cycling on the random telegraph noise (RTN) threshold voltage instability Of NOR and NAND Flash memories is studied in detail. RTN is shown to introduce exponential tails in the distribution of the threshold voltage variation between two subsequent read operations on the cells. Tail height is shown to increase as a function of the stress levels, with a larger relative increase for the NAND case. The slope of the distribution instead remains nearly independent of the number of applied P/E cycles. This; reveals that trap generation takes place according to the native trap distribution over the active area and means that the tail slope is a basic RTN parameter, depending on the cell process details for a fixed technology. These results are important for the design of the threshold voltage levels in multilevel NOR and NAND technologies.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available