4.6 Article

Resistive memory switching of CuxO films for a nonvolatile memory application

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 4, Pages 309-311

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.917109

Keywords

CuxO; on/off ratio; plasma oxidation; resistive switching; retention test

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Polyerystalline CuxO films produced by plasma oxidation are investigated for nonvolatile memory applications. Reversible bistable resistive switching from a high-resistance state to a low-resistance state, and vice versa, is observed in an integrated Al/CuxO/Cu structure under voltage sweeping. More than 3000 repetitive cycles are observed in 180-mu m memory devices with an on/off ratio of ten times. Data testing shows that the devices meet the ten-year retention requirement for the storage of programmed logic signals.

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