Journal
LASER & PHOTONICS REVIEWS
Volume 9, Issue 2, Pages L6-L10Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.201400448
Keywords
silicon photonics; heterogeneous integration; lasers; BCB bonding; III-V processing
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Funding
- IWT through SBO-Glucosens project
- ERC through InSpectra project
- research foundation Flanders (FWO)
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This article presents a novel III-V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side-coupled to a III-V waveguide, will provide high and narrow-band reflectivity into the III-V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side-mode suppression ratio up to 48 dB.
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