Wet chemical synthesis of WO3 thin films for supercapacitor application

Tungstic oxide (WO3) thin films have been synthesized by wet chemical method, i.e., successive ionic layer adsorption and reaction (SILAR) method. These films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. The XRD pattern revealed the formation of polycrystalline WO3 films. Scanning electron micrographs demonstrate the three-dimensional aggregated irregular extended rod shaped morphology of WO3 thin films. The WO3 film showed a direct band gap of 2.5 eV. The WO3 film exhibited specific capacitance of 266 F center dot g(-1) in 1 M Na2SO4 electrolyte at the scan rate of 10 mVs(-1).